DMTH4007SK3-13

$1.26

Description：MOSFET N-CH 40V 17.6A/76A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3c8558b2a006 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 17.6A/76A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：17.6A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2082 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH4007SK3-13

Overview

The DMTH4007SK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 40 V and a gate-source voltage (V_GSS) rating of ±20 V. The device supports a continuous drain current of 17.6 A at an ambient temperature of +25°C, rising to 76 A when the case temperature is maintained at +25°C. The static drain-source on-resistance (R_DS(ON)) is specified as a maximum of 6 mΩ at V_GS = 10 V and I_D = 20 A. Total power dissipation reaches 3.1 W in free air and 59 W when mounted to a heatsink. The component operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments
Features 100% unclamped inductive switching capability for robust end applications
Qualified to AEC-Q101 standards ensuring high reliability
Lead-free finish with RoHS compliance and halogen/antimony-free construction

Applications

Power management functions
DC-DC converters
Backlighting circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the required package variant matches the TO252 (DPAK) outline dimensions provided in the mechanical data section. Ensure the application environment remains within the specified thermal resistance limits for both ambient and case-mounted scenarios.

Selection Notes

Select this component for designs requiring low on-state losses combined with superior switching performance. The device is optimized for high efficiency power management where minimizing R_DS(ON) is critical. Consider the excellent Q_gd x R_DS(ON) figure of merit for applications demanding fast switching speeds without excessive conduction losses.

Part Context

This part belongs to the DMTH4007 series of 40V N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a TO252 (DPAK) surface-mount case constructed with molded plastic compound. The product marking includes the manufacturer code 'H4007S' along with date code information for traceability.