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The DMTH4007SPD-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of 40V and a maximum on-state resistance (RDS(ON)) of 8.6mΩ at VGS=10V. The device supports a continuous drain current of 45A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C.
Verify the specific package variant (Type C or Type UXD) against the design requirements before ordering. Confirm that the tape and reel quantity matches the production needs. Ensure the component meets all applicable environmental directives such as RoHS and REACH for the target market.
Select this component for applications requiring dual N-channel MOSFETs with low RDS(ON) and high thermal stability. Consider the 40V rating and 45A current capability relative to the load requirements. Evaluate the PowerDI5060-8 package dimensions for PCB layout compatibility.
This part belongs to the DMTH4007 series of dual N-channel MOSFETs designed by Diodes Incorporated. It is distinct from single-channel variants and higher voltage ratings within the broader product line. The device is intended for compact power solutions where space efficiency and thermal performance are critical.
An automotive-compliant version is available under the separate datasheet for DMTH4007SPDQ. Verify if the standard industrial grade meets the application's reliability requirements before considering alternatives.
The maximum operating junction temperature is +175°C.
The standard DMTH4007SPD is not explicitly stated as AEC-Q101 qualified; an automotive-compliant part is available under the separate designation DMTH4007SPDQ.
The gate threshold voltage ranges from 2V to 4V when tested at ID = 250μA.