DMTH4007SPDQ-13

Overview

The DMTH4007SPDQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 40V drain-source voltage rating and an 8.6mΩ maximum on-resistance at VGS=10V. The device supports a continuous drain current of 48A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8 (Type C) carrier, it includes two independent channels with a total gate charge of 41.9nC.

Feature Summary

• Dual N-channel configuration housed in a single PowerDI5060-8 package
• Qualified to AEC-Q101 standards with PPAP capability for automotive use
• Rated for operation up to +175°C junction temperature
• 100% unclamped inductive switching (UIS) tested in production

Applications

• Backlighting systems
• Power-management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging format. Confirm that the component meets IATF 16949 manufacturing requirements if your application demands strict automotive change control protocols. Ensure compatibility with the specified PowerDI5060-8 footprint during PCB layout.

Selection Notes

Select this component when a compact dual-switch solution is required for low-voltage automotive power stages. The 40V rating suits 12V or 24V nominal systems. Consider the 8.6mΩ RDS(ON) for minimizing conduction losses. Verify thermal management capabilities against the 57°C/W junction-to-ambient resistance for steady-state ambient conditions.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes the PowerDI®5060-8 package, which provides a robust lead-free construction with matte tin annealed terminals over a copper leadframe. The device is halogen and antimony free, adhering to RoHS directives.

Replacement Considerations

The datasheet lists DMTH4007SPD as a similar product number within the same family. Verify pinout compatibility and electrical parameters before substitution.

FAQ

What is the maximum pulsed drain current for this device?

The maximum pulsed drain current is 192A, measured with a 10µs pulse duration and a 1% duty cycle.

Is the body diode reverse recovery time specified?

Yes, the typical body diode reverse recovery time is 29.9ns when IF=20A and di/dt=100A/μs.

How many pins does the PowerDI5060-8 package have?

The PowerDI5060-8 package contains eight terminals, supporting two independent channels with separate drains, sources, and gates.