DMTH4007SPDWQ-13

$0.64

Description：MOSFET 2N-CH 40V 12.5A PWRDI50
Series：-

SKU:23f5cbeecdd3 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 12.5A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：12.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs：8.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2026pF @ 30V
Power - Max：2.6W (Ta), 37.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8 (SWP)
Grade：Automotive
Qualification：AEC-Q101

Download product information

DMTH4007SPDWQ-13

Overview

The DMTH4007SPDWQ is a dual N-channel enhancement mode MOSFET rated for 40V drain-source voltage and +175°C operation. It features an 8.6mΩ maximum on-resistance at VGS=10V and supports 48A continuous drain current at TC=+25°C. Packaged in PowerDI5060-8, it meets AEC-Q101 standards with PPAP capability.

Feature Summary

Rated to +175°C for high ambient temperature environments
100% Unclamped Inductive Switching (UIS) tested in production
Low RDS(ON) minimizes on-state losses
Fast switching speed with low input capacitance

Applications

Backlighting
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity and carrier type. Confirm that the component meets all applicable automotive quality standards and regulatory compliance requirements for the intended deployment environment before finalizing procurement.

Selection Notes

Select this component for applications requiring robust thermal performance up to +175°C and high conversion efficiency. Ensure the design accommodates the specified gate threshold voltage range and utilizes the exposed drain pad for optimal thermal dissipation within the PowerDI5060-8 package constraints.

Part Context

This device belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is manufactured in IATF 16949 certified facilities and is designed to meet stringent automotive reliability requirements while providing enhanced switching performance and thermal stability.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pinouts, electrical ratings, and package dimensions to ensure compatibility without modifying the existing circuit layout or thermal management strategy.