DMTH4007SPSQ-13

$1.55

Description：MOSFET N-CH 40V 15.7A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8ae15643496f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 15.7A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：15.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2082 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH4007SPSQ-13

Overview

The DMTH4007SPSQ-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage of 40V and a continuous drain current of 100A at TC = +25°C. The device has a typical on-resistance of 4.9mΩ (max 7.6mΩ) at VGS = 10V and ID = 20A. Operating temperature ranges from -55°C to +175°C. Thermal resistance junction-to-case is 1.1°C/W, with total power dissipation up to 136W at TC = +25°C.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Thermally efficient package design for cooler running applications
Low on-resistance minimizes conduction losses
Low input capacitance enables fast switching speeds

Applications

Power management systems
DC-DC converters
Motor control circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the manufacturer's documentation. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if automotive change control protocols are necessary for the intended deployment.

Selection Notes

Select this component when designing for automotive-grade reliability requiring IATF 16949 certified manufacturing. Ensure the application environment supports the specified thermal characteristics and that the gate drive voltage aligns with the optimal RDS(ON) performance conditions provided in the electrical specifications.

Part Context

This part belongs to the DMTH4007SPSQ series of automotive-grade N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package, which offers a profile under 1.1mm. The product line is designed to meet stringent automotive industry standards for durability and thermal performance.

Replacement Considerations

Consult official Diodes Incorporated substitution guides or datasheets for verified equivalent parts. Do not assume cross-compatibility based solely on voltage and current ratings without verifying pinout, package dimensions, and specific electrical parameters.