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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：15.7A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2082 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 136W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH4007SPSWQ-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8/SWP package. It features a maximum drain-source breakdown voltage of 40V and a typical on-resistance of 4.9mΩ at VGS=10V, with a maximum of 7.6mΩ. The device supports a continuous drain current of 100A at TC=+25°C and operates up to +175°C junction temperature. Key dynamic parameters include an input capacitance of 2,082pF and a total gate charge of 41.9nC.
Feature Summary
- Qualified to AEC-Q101 standards for automotive applications
- Operates reliably in high ambient temperature environments up to +175°C
- Utilizes a thermally efficient package profile under 1.1mm for thin designs
- Manufactured in IATF 16949 certified facilities with PPAP capability
Applications
- Automotive power management systems
- DC-DC converters
- Motor controls
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component meets RoHS 3 compliance and is halogen-free. Ensure the design accommodates the specified thermal resistance values for the intended mounting conditions.
Selection Notes
Select this component when a low-profile, automotive-grade N-channel MOSFET is required for 40V applications. The PowerDI5060-8/SWP package offers superior thermal dissipation compared to standard surface-mount options. Verify that the gate drive voltage aligns with the optimal RDS(ON) performance characteristics provided in the datasheet.
Part Context
This part belongs to Diodes Incorporated's automotive MOSFET portfolio designed for high-reliability environments. The 'DMTH' prefix indicates a specific series optimized for automotive power switching. The 'SPSWQ' suffix denotes the specific package type and qualification status within the product line.
Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference pinout compatibility and thermal resistance specifications before replacing.
