DMTH4008LFDFWQ-13

DMTH4008LFDFWQ-13

$0.84
  • Description:MOSFET N-CH 40V 11.6A 6UDFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:b1b9604db7fd Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 40V 11.6A 6UDFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:11.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:11.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:14.2 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1030 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):990mW (Ta)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:U-DFN2020-6 (SWP) (Type F)
  • Package / Case:6-UDFN Exposed Pad

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DMTH4008LFDFWQ-13

Overview

The DMTH4008LFDFWQ-13 is a 40V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (BVDSS) of 40V and operates up to +175°C junction temperature. The device offers a low on-resistance (RDS(ON)) of 11.5mΩ at VGS=10V and 18mΩ at VGS=4.5V, with continuous drain currents of 11.6A and 9.3A respectively. Packaged in a U-DFN2020-6/SWP (Type F) footprint, it supports AEC-Q101 qualification and PPAP requirements.

Feature Summary

  • Qualified to AEC-Q101 standards with PPAP capability for automotive use
  • Rated for operation in high ambient temperatures up to +175°C
  • Features 100% unclamped inductive switching (UIS) testing for robustness
  • Utilizes a 0.6mm profile package suitable for low-profile designs

Applications

  • Power-management functions
  • DC-DC converters
  • Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel quantity as defined in the manufacturer's ordering information. Confirm that the component meets the required IATF 16949 manufacturing facility standards if strict automotive change control protocols are mandated for the target application.

Selection Notes

Select this component when designing circuits requiring a 40V rating with high thermal resilience up to 175°C. Ensure the gate drive voltage aligns with the specified RDS(ON) conditions at either 4.5V or 10V. Verify PCB layout constraints match the U-DFN2020-6/SWP footprint dimensions and pad layout recommendations provided in the datasheet.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It is manufactured in IATF 16949 certified facilities and is fully RoHS compliant. The device is available in various packing quantities, including reels of 3,000 and 10,000 units, catering to different production volume requirements.

Replacement Considerations

Direct substitutes include other parts from the same family such as DMTH4008LFDFWQ-7 or DMTH4008LFDFWQ-13R, which share identical electrical characteristics but differ in packaging quantity.

DMTH4008LFDFWQ-13DMTH4008LFDFWQ-13
$0.84
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