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The DMTH4008LFDFWQ-13 is a 40V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (BVDSS) of 40V and operates up to +175°C junction temperature. The device offers a low on-resistance (RDS(ON)) of 11.5mΩ at VGS=10V and 18mΩ at VGS=4.5V, with continuous drain currents of 11.6A and 9.3A respectively. Packaged in a U-DFN2020-6/SWP (Type F) footprint, it supports AEC-Q101 qualification and PPAP requirements.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel quantity as defined in the manufacturer's ordering information. Confirm that the component meets the required IATF 16949 manufacturing facility standards if strict automotive change control protocols are mandated for the target application.
Select this component when designing circuits requiring a 40V rating with high thermal resilience up to 175°C. Ensure the gate drive voltage aligns with the specified RDS(ON) conditions at either 4.5V or 10V. Verify PCB layout constraints match the U-DFN2020-6/SWP footprint dimensions and pad layout recommendations provided in the datasheet.
This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It is manufactured in IATF 16949 certified facilities and is fully RoHS compliant. The device is available in various packing quantities, including reels of 3,000 and 10,000 units, catering to different production volume requirements.
Direct substitutes include other parts from the same family such as DMTH4008LFDFWQ-7 or DMTH4008LFDFWQ-13R, which share identical electrical characteristics but differ in packaging quantity.