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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 10A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 46.2A (Tc)
- Rds On (Max) @ Id, Vgs：12.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：881pF @ 20V
- Power - Max：2.67W (Ta), 39.4W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type UXD)
- Grade：-
- Qualification：-
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Overview
The DMTH4008LPDW-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a 40V drain-source voltage rating and operates up to +175°C. At VGS=10V and ID=20A, the maximum on-resistance is 12.3mΩ; at VGS=4.5V and ID=10A, it is 17.5mΩ. Continuous drain current reaches 46.2A at TC=+25°C. The device includes wettable flanks for optical inspection and is fully RoHS compliant.
Feature Summary
- Dual N-channel configuration integrated into a single compact PowerDI5060-8/SWP package
- Wettable flank design enables improved optical inspection of solder joints
- Rated for operation in high ambient temperature environments up to +175°C
- 100% unclamped inductive switching tested in production for enhanced reliability
Applications
- High efficiency power management functions
- DC-DC converters
Procurement Notes
Verify the specific suffix '-13' corresponds to the 2,500-unit tape and reel packaging format. Confirm that the 'SWP' designation indicates the wettable flank variant, which differs visually from standard non-wettable versions. Ensure the application environment supports the specified thermal characteristics and junction temperature limits.
Selection Notes
Select this component when space constraints require two independent N-channel MOSFETs in a single footprint. The low on-resistance minimizes conduction losses, while the fast switching speed suits high-frequency applications. Verify gate drive voltage compatibility with the specified threshold and on-resistance test conditions.
Part Context
This part belongs to Diodes Incorporated's DMTH series of dual MOSFETs designed for high-density power solutions. It utilizes the PowerDI®5060-8/SWP case material, which is a molded plastic green compound with UL 94V-0 flammability classification. The terminals are matte tin annealed over a copper leadframe.
Replacement Considerations
For automotive applications requiring AEC-Q100 qualification and IATF 16949 manufacturing, consider the DMTH4008LPDWQ variant. Standard replacements must match the dual N-channel topology, 40V rating, and PowerDI5060-8/SWP footprint.
FAQ
What is the difference between the DMTH4008LPDW and DMTH4008LPDWQ?
The DMTH4008LPDWQ is an automotive-compliant version qualified to AEC-Q100/101/200 standards and manufactured in IATF 16949 certified facilities, whereas the standard LPDW does not carry these specific automotive certifications.
How does the wettable flank feature benefit assembly?
The wettable flank design allows solder to flow around the side leads, enabling automated optical inspection (AOI) to verify the quality of the solder joint underneath the component body.
