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Product Detailed Parameters
- Description：MOSFET N-CH 40V PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：14.4A (Ta), 64.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：8.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1088 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.99W (Ta), 55.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH4008LPS-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 surface-mount package. It features a drain-source voltage rating of 40V and a maximum continuous drain current of 64.8A at a case temperature of +25°C. The device exhibits a low on-state resistance of 8.8mΩ at VGS=10V and 13mΩ at VGS=5V. It supports an operating junction temperature range from -55°C to +175°C and includes a total power dissipation capability of 55.5W at TC=+25°C.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments
- Features 100% unclamped inductive switching testing in production for enhanced reliability
- Designed with low input capacitance and fast switching speed for efficient performance
- Qualified to JEDEC standards for high reliability applications
Applications
- BLDC motors
- DC-DC converters
- Load switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 2,500 units. Confirm that the standard DMTH4008LPS variant meets your thermal and packaging requirements if reel quantities are not needed. Ensure the selected component aligns with the PowerDI5060-8 footprint dimensions provided in the mechanical data section of the datasheet.
Selection Notes
Select this component when a 40V N-channel MOSFET with low RDS(ON) is required for high-efficiency power management. Consider the 64.8A continuous drain current limit at +25°C case temperature for sizing. Evaluate the thermal resistance values against your system's heat dissipation capabilities. Verify compatibility with gate drive voltages of 5V or 10V based on the specified on-resistance characteristics.
Part Context
This part belongs to the DMTH series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 package technology designed to minimize on-state resistance while maintaining superior switching performance. The product line targets high-reliability applications requiring robust end-use performance under demanding electrical conditions.
Replacement Considerations
An automotive-compliant version is available as DMTH4008LPSQ. Verify pinout compatibility and thermal characteristics before substituting with other 40V N-channel MOSFETs in the PowerDI5060-8 package.
