DMTH4008LPSW-13

$0.20

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:eef79b9f715e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：14.4A (Ta), 64.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1088 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.99W (Ta), 55.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH4008LPSW-13

Overview

The DMTH4008LPSW-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage (BVDSS) of 40V and a low on-state resistance (RDS(ON)) of 8.8mΩ at VGS=10V, supporting a continuous drain current (ID) of 64.8A at TC=25°C. The device operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
100% unclamped inductive switching tested in production for robustness
Low input capacitance and fast switching speed for efficient power management

Applications

BLDC motors
DC-DC converters
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units as documented in the official datasheet. Confirm that the PowerDI5060-8/SWP package type matches the required footprint for the target PCB layout before finalizing procurement orders.

Selection Notes

Select this component when a 40V rating is sufficient and low RDS(ON) is critical for minimizing conduction losses. Ensure the thermal design accommodates the specified junction-to-ambient resistance. Verify gate drive voltage compatibility with the threshold characteristics for optimal switching performance.

Part Context

This part belongs to Diodes Incorporated's PowerDI5060-8 series of surface-mount MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications. An automotive-compliant version is available under a separate designation.