DMTH4008LPSWQ-13

$0.36

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d9d1cf80f722 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：14.4A (Ta), 64.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1088 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.99W (Ta), 55.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH4008LPSWQ-13

Overview

The DMTH4008LPSWQ-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8/SWP package. It features a maximum drain-source on-resistance of 8.8mΩ at VGS=10V and 13mΩ at VGS=5V, supporting continuous drain currents of 64.8A at TC=25°C (VGS=10V). The device operates within a junction temperature range of -55°C to +175°C and includes an integrated body diode with a forward voltage of 1.0V max at IS=10A.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications
Rated for operation up to +175°C junction temperature
100% unclamped inductive switching tested in production
Low input capacitance and fast switching speed

Applications

Brushless DC motor controls
DC-DC converters
Load switches

Procurement Notes

Verify the specific suffix 'Q' indicates AEC-Q101 qualification and PPAP capability when sourcing. Confirm the tape and reel quantity matches the required 2,500 units per carrier. Ensure the ordering part number aligns exactly with the datasheet designation to guarantee correct package type and electrical characteristics.

Selection Notes

Select this component for high ambient temperature environments requiring robust switching performance. The low RDS(ON) minimizes conduction losses, while the wide operating temperature range supports demanding thermal conditions. Verify that the gate drive voltage meets the threshold requirements for optimal on-resistance performance.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for reliability in harsh environments. It utilizes a molded plastic green molding compound with UL 94V-0 flammability rating. The device is manufactured in IATF 16949 certified facilities to meet strict automotive change control requirements.

Replacement Considerations

Check for compatible parts within the same DMTH series family that share the PowerDI5060-8/SWP package and similar electrical ratings. Ensure any substitute maintains AEC-Q101 qualification if automotive compliance is required. Verify pinout compatibility and thermal resistance values before implementation.