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DMTH4011SPD-13 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET 2N-CH 40V 11.1A PWRDI50. Review the specifications below when checking this part for your BOM.
The DMTH4011SPD-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a 40V drain-source voltage rating and a maximum on-resistance of 15mΩ at VGS=10V. The device supports continuous drain currents of 42A at TC=+25°C and 29.7A at TC=+100°C. It operates within a temperature range of -55°C to +175°C and includes 100% unclamped inductive switching capability.
Verify the specific package variant (Type C or Type UXD) required for your design, as both are listed under the same part number prefix. Confirm that the automotive-compliant version (DMTH4011SPDQ) is not needed if operating in harsh environments. Ensure the ordering suffix matches the desired tape and reel quantity of 2,500 units.
Select this component when a compact dual MOSFET solution is required for low-voltage, high-current applications. The 15mΩ RDS(ON) minimizes conduction losses, while the fast switching speeds support efficient DC-DC conversion. Consider the thermal resistance values for heatsinking requirements in high ambient temperature scenarios.
This device belongs to the DMTH series of surface-mount MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI5060-8 footprint, offering a balance between current handling capacity and board space efficiency. The series is engineered for robust performance in consumer and industrial electronics requiring reliable switching.
The datasheet notes an automotive-compliant alternative available under the separate part number DMTH4011SPDQ. Verify if AEC-Q qualification is necessary for your specific application environment before selecting a substitute.
At a case temperature of +100°C, the maximum continuous drain current is 29.7A.
Yes, the device is rated for 100% unclamped inductive switching to ensure robust end-application reliability.
The typical total gate charge (Qg) is 10.6nC, measured at VDS=20V, ID=20A, and VGS=10V.
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