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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 11.1A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：11.1A (Ta), 42A (Tc)
- Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：805pF @ 20V
- Power - Max：2.6W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMTH4011SPD-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a 40V drain-source voltage rating and a maximum on-resistance of 15mΩ at VGS=10V. The device supports continuous drain currents of 42A at TC=+25°C and 29.7A at TC=+100°C. It operates within a temperature range of -55°C to +175°C and includes 100% unclamped inductive switching capability.
Feature Summary
- Dual N-channel configuration for high-efficiency power management applications
- Rated for operation up to +175°C junction temperature
- Guaranteed 100% unclamped inductive switching reliability
- Totally lead-free and fully RoHS compliant
Applications
- Backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific package variant (Type C or Type UXD) required for your design, as both are listed under the same part number prefix. Confirm that the automotive-compliant version (DMTH4011SPDQ) is not needed if operating in harsh environments. Ensure the ordering suffix matches the desired tape and reel quantity of 2,500 units.
Selection Notes
Select this component when a compact dual MOSFET solution is required for low-voltage, high-current applications. The 15mΩ RDS(ON) minimizes conduction losses, while the fast switching speeds support efficient DC-DC conversion. Consider the thermal resistance values for heatsinking requirements in high ambient temperature scenarios.
Part Context
This device belongs to the DMTH series of surface-mount MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI5060-8 footprint, offering a balance between current handling capacity and board space efficiency. The series is engineered for robust performance in consumer and industrial electronics requiring reliable switching.
Replacement Considerations
The datasheet notes an automotive-compliant alternative available under the separate part number DMTH4011SPDQ. Verify if AEC-Q qualification is necessary for your specific application environment before selecting a substitute.
FAQ
What is the maximum continuous drain current at a case temperature of +100°C?
At a case temperature of +100°C, the maximum continuous drain current is 29.7A.
Does this component support unclamped inductive switching?
Yes, the device is rated for 100% unclamped inductive switching to ensure robust end-application reliability.
What is the typical gate charge value?
The typical total gate charge (Qg) is 10.6nC, measured at VDS=20V, ID=20A, and VGS=10V.
