DMTH4011SPDW-13

FET, MOSFET Arrays Overview

The DMTH4011SPDW-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an 8-PowerTDFN PowerDI5060-8 surface-mount package. It features a drain-source voltage (BV_DSS) of 40V at 25°C and supports continuous drain currents of 11.1A at ambient temperature and 42A at case temperature. The device exhibits a maximum on-resistance of 15 milliohms at 20A with a 10V gate drive. Key electrical parameters include a maximum gate charge of 10.6nC at 10V and a maximum input capacitance of 805pF at 20V. It operates within a junction temperature range of -55°C to 175°C and dissipates up to 2.6W at ambient conditions.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrating two independent transistors into a single compact package for space-efficient circuit design.
• Automotive-grade reliability compliant with AEC-Q101 standards, ensuring robust performance in demanding environments.
• Low on-resistance characteristics optimized for high-current applications, enhancing power efficiency and reducing thermal stress.

FET, MOSFET Arrays Applications

• Automotive power management systems requiring AEC-Q101 qualified components
• High-current DC-DC converter topologies utilizing dual switch configurations
• Motor control circuits needing integrated dual-channel switching capabilities

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'SPDW-13' against official Diodes Incorporated documentation to confirm the exact reel quantity and tape specifications. Ensure that the PowerDI5060-8 footprint matches your PCB layout requirements precisely. Confirm AEC-Q101 compliance status if the application mandates automotive qualification standards before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET solution is required for 40V applications with high current handling capabilities. The PowerDI5060-8 package offers superior thermal dissipation compared to standard DFNs. Consider the 15mΩ on-resistance for efficiency calculations and verify that the 10.6nC gate charge aligns with your driver's switching speed requirements.

FET, MOSFET Arrays Part Context

This part belongs to the DMTH series of dual N-channel MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI5060-8 package, which provides enhanced thermal performance and a small footprint suitable for dense PCB layouts. The series is targeted at automotive and industrial applications where reliability and high current density are critical.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes may include other dual N-channel MOSFETs in the PowerDI5060-8 package with similar 40V ratings and comparable on-resistance values. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with Diodes Incorporated's official replacement guide for validated alternatives.