ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 10.2A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：10.2A (Ta), 27.5A (Tc)
- Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：750pF @ 20V
- Power - Max：1.16W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXD)
- Grade：-
- Qualification：-
Download product information
Overview
The DMTH4014LDVW-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8/SWP package. It features a drain-source voltage (BVDSS) of 40V and a maximum continuous drain current of 27.5A at TC = +25°C. The device offers a low on-resistance (RDS(ON)) of 15mΩ at VGS = 10V and 25mΩ at VGS = 4.5V. Operating temperatures range from -55°C to +175°C.
Feature Summary
- Dual N-channel configuration with wettable flank terminals for improved optical inspection
- Rated for high ambient temperature environments up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production for robustness
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Wireless charging systems
- DC-DC converters
- Power management circuits
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 2,000-unit tape and reel packaging format. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance standards. Ensure the selected variant aligns with the required surface mount technology requirements for the intended PCB layout.
Selection Notes
Select this component for applications requiring high efficiency power management with minimized on-state losses. Consider the dual channel architecture for space-constrained designs. Evaluate thermal performance based on the specified RθJA values under different mounting conditions. Verify gate threshold voltage compatibility with the driving circuitry for optimal switching performance.
Part Context
This part belongs to the DMTH series of dual N-channel MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI3333-8/SWP case style, which provides a compact footprint suitable for modern electronic assemblies. The series emphasizes low on-resistance and superior switching capabilities for efficient power conversion.
Replacement Considerations
Consult official documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure electrical parameters and pin configurations match exactly.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +175°C.
Is the device qualified for automotive applications?
For automotive applications requiring specific change control or AEC-Q qualification, contact Diodes Incorporated directly.
What is the package type?
The device is packaged in a PowerDI3333-8/SWP (Type UXD) case.
