DMTH4014LFVW-13

$0.16

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:511f4385db45 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：11.5A (Ta), 49.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 57.7W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH4014LFVW-13

Overview

The DMTH4014LFVW is a 40V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source voltage (BVDSS) of 40V and a gate-source voltage (VGSS) rating of ±20V. The device offers a typical on-resistance (RDS(ON)) of 9.8mΩ at VGS=10V and 14.5mΩ at VGS=4.5V, supporting continuous drain currents up to 49.8A at TC=+25°C. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Low RDS(ON) design minimizes on-state power losses
Excellent Qgd x RDS(ON) figure of merit for efficient switching
Wettable flank construction enables improved optical inspection

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and carrier type. Confirm that the component meets all required environmental compliance standards, including RoHS and halogen-free specifications, before finalizing procurement decisions.

Selection Notes

Select this component when a low-profile surface-mount solution is required for high-efficiency power management. Ensure the application demands a 40V breakdown voltage and can accommodate the thermal characteristics of the PowerDI3333-8 package for optimal performance.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic PowerDI3333-8/SWP package with matte tin annealed terminal finishes over a copper leadframe.