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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：11.5A (Ta), 49.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：13.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 57.7W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH4014LFVW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8/SWP (Type UX) package and operates with a drain-source voltage of 40 V. The device features a maximum on-resistance of 13.7 mΩ at VGS = 10 V and 26 mΩ at VGS = 4.5 V, supporting continuous drain currents up to 49.8 A at TC = +25°C. It includes wettable flank terminals for improved optical inspection and supports junction temperatures up to +175°C.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features wettable flank terminals to facilitate improved optical inspection
- Includes 100% unclamped inductive switching (UIS) testing during production
Applications
- Backlighting systems
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The -7 suffix indicates a 2,000-unit tape and reel carrier, while other suffixes may denote different quantities or automotive-grade variants. Confirm that the standard commercial version aligns with project requirements rather than the separate automotive-compliant datasheet part number.
Selection Notes
Select this component when low on-state resistance and superior switching performance are required for high-efficiency power management. The PowerDI3333-8/SWP package provides a compact footprint suitable for space-constrained designs. Ensure thermal management strategies account for the specified thermal resistance values under expected operating conditions.
Part Context
This MOSFET belongs to Diodes Incorporated's PowerDI series, designed to minimize on-state losses while maintaining robust switching capabilities. The product line targets applications requiring efficient power conversion within small form factors. The specific model integrates silicon technology optimized for high-current handling and thermal stability.
Replacement Considerations
An automotive-compliant variant is available under the separate part number DMTH4014LFVWQ. Verify if the application requires automotive-specific qualification standards before selecting the standard commercial version.
FAQ
What is the purpose of the wettable flank feature?
The wettable flank design allows solder to extend along the vertical sides of the leads, enabling improved optical inspection of solder joints.
How does the device handle inductive switching loads?
The device undergoes 100% unclamped inductive switching (UIS) testing in production to ensure reliability and robustness in end applications involving inductive loads.
