DMTH4014LFVWQ-7

$0.76

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:86766bea1878 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：11.5A (Ta), 49.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.1W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH4014LFVWQ-7

Overview

The DMTH4014LFVWQ is a 40V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source on-resistance of 13.7mΩ at VGS=10V and 26mΩ at VGS=4.5V. The device supports a continuous drain current of 49.8A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. It includes an unclamped inductive switching (UIS) rating with EAS of 19.6mJ.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
Features wettable flank design to improve optical inspection reliability
100% production tested for unclamped inductive switching (UIS)
Qualified to AEC-Q101 standards with PPAP capability for automotive use

Applications

Automotive backlighting systems
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix (-7 or -13) against the required packing quantity before procurement. Confirm that the application environment meets the specified thermal and voltage ratings. Ensure compliance with RoHS and halogen-free requirements if mandated by the end product specifications. Check for IATF 16949 certification needs for automotive supply chains.

Selection Notes

Select this component when a low-profile surface-mount solution is required for 40V applications. Consider the PowerDI3333-8 package for space-constrained designs. Evaluate the thermal resistance characteristics relative to the expected power dissipation. Verify gate drive compatibility with the specified threshold voltage ranges.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes silicon technology and is manufactured in IATF 16949 certified facilities. The device is designed to meet stringent automotive quality and reliability standards.

Replacement Considerations

Consult official datasheets for equivalent parts from other manufacturers. Verify pinout compatibility and electrical parameter margins before substitution.