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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 10.6A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：10.6A (Ta), 43.6A (Tc)
- Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：733pF @ 20V
- Power - Max：2.41W (Ta), 42.8W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMTH4014LPDQ-13 is a dual N-channel enhancement mode MOSFET rated for 40V drain-source voltage and +175°C operation. It features a maximum on-resistance of 15mΩ at VGS=10V and 25mΩ at VGS=4.5V, supporting continuous currents up to 43.6A at case temperature of +25°C. Packaged in PowerDI5060-8, it includes two independent channels with low input capacitance and fast switching speeds.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP support for automotive applications
- Rated for high ambient temperatures up to +175°C junction temperature
- 100% UIS tested in production to ensure robust end-application reliability
- Totally lead-free, RoHS compliant, and halogen/antimony free
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific package variant (Type C or Type UXD) required for your design, as both are available under this part number. Confirm that the supplier provides traceability documentation consistent with IATF 16949 certified facilities, given the automotive qualification status of this component.
Selection Notes
Select this component when designing for automotive environments requiring high thermal stability and ruggedness. The dual-channel configuration allows for efficient power management within a compact footprint. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance performance.
Part Context
This device belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes the PowerDI®5060-8 surface-mount package to provide enhanced thermal dissipation capabilities compared to smaller packages, making it suitable for space-constrained but thermally demanding applications.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Generic replacements may not match the AEC-Q101 qualification or specific thermal characteristics required for automotive compliance.
