DMTH4014LPDW-13

DMTH4014LPDW-13

$0.25
  • Description:IC
  • Series:-

SKU:0a372a0122a4 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:10.6A (Ta), 43.6A (Tc)
  • Rds On (Max) @ Id, Vgs:15mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:733pF @ 20V
  • Power - Max:2.4W (Ta), 42.8W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PowerDI5060-8 (Type UXD)
  • Grade:-
  • Qualification:-

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DMTH4014LPDW-13

Overview

The DMTH4014LPDW-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a 40V drain-source voltage rating and operates up to +175°C junction temperature. The device offers low on-state resistance of 15mΩ at VGS=10V and 25mΩ at VGS=4.5V, supporting continuous drain currents of 43.6A at TC=+25°C. Key electrical parameters include a gate threshold voltage of 1V to 3V, total gate charge of 10.2nC at VGS=10V, and input capacitance of 733pF.

Feature Summary

  • Dual N-channel configuration with optimized low on-state resistance for high-efficiency power management.
  • Rated for operation in high ambient temperature environments up to +175°C.
  • Manufactured with 100% Unclamped Inductive Switching (UIS) testing for enhanced reliability.
  • Totally lead-free, fully RoHS compliant, and halogen/antimony free.

Applications

  • Backlighting circuits
  • Power-management functions
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier format as documented in the official datasheet. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance standards, before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring robust performance in high-temperature conditions up to +175°C. Ensure the design accommodates the dual-channel architecture and utilizes the exposed drain pad for effective thermal dissipation. Verify that the gate drive voltage aligns with the specified thresholds to achieve the desired on-resistance characteristics.

Part Context

This part belongs to the DMTH4014 series of dual N-channel MOSFETs designed by Diodes Incorporated. It shares the same core electrical specifications as the non-suffix variant but is specifically packaged for automated surface-mount assembly using a standard tape and reel carrier system.

Replacement Considerations

An automotive-compliant version is available under the separate part number DMTH4014LPDWQ. Verify if the specific automotive qualification requirements necessitate this alternative over the standard commercial grade component.

FAQ

What is the maximum operating junction temperature?

The device is rated for an operating and storage temperature range of -55°C to +175°C.

How is the device tested for inductive load switching reliability?

The manufacturing process includes 100% Unclamped Inductive Switching (UIS) testing in production to ensure robust end-application performance.

What is the package material classification?

The package uses a molded plastic 'Green' molding compound that is UL Flammability Classification Rating 94V-0 compliant.

DMTH4014LPDW-13DMTH4014LPDW-13
$0.25
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