DMTH4014LPSW-13

$0.19

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:216d42857eb9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：43.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：4W (Ta), 46.9W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH4014LPSW-13

Overview

The DMTH4014LPSW-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 (SWP) package. It features a drain-source voltage rating of 40V and a maximum continuous drain current of 43.5A at +25°C case temperature. The device offers a low on-state resistance of 14.5mΩ at VGS=10V and 25.0mΩ at VGS=4.5V. It supports an operating junction temperature range up to +175°C and includes wettable flank terminals for enhanced inspection.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features wettable flank terminals to improve optical inspection reliability
Undergoes 100% unclamped inductive switching (UIS) testing in production

Applications

High frequency switching circuits
Synchronous rectification systems
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the PowerDI5060-8 (SWP) variant with wettable flanks matches the required footprint and thermal management specifications for the target PCB design before finalizing procurement orders.

Selection Notes

Select this component when designing power management solutions requiring robust performance under elevated thermal conditions. The low RDS(ON) characteristics support high conversion efficiency, while the +175°C rating ensures stability in demanding environments. Ensure gate drive voltages align with the specified thresholds for optimal switching performance.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package, which integrates a large exposed drain pad for efficient heat dissipation. The 'SWP' designation indicates the specific wettable flank package style within this product family.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical ratings, package dimensions, and thermal characteristics to ensure functional compatibility without compromising circuit integrity.