DMTH41M2SPS-13

$3.09

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:13764ad8ed23 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：225A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：138 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11085 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.4W (Ta), 158W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type K)
Package / Case：8-PowerTDFN

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DMTH41M2SPS-13

Overview

The DMTH41M2SPS-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source on-resistance of 1.2mΩ at VGS=10V and a continuous drain current of 225A at TC=+25°C. The device supports an operating temperature range from -55°C to +175°C, with a total power dissipation of 158W at TC=+25°C.

Feature Summary

Rated for operation up to +175°C junction temperature
Engineered for high conversion efficiency and low on-state losses
Features a thermally efficient package profile under 1.1mm
Verified through 100% unclamped inductive switching testing

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific datasheet revision (DS45226 Rev. 3) against your design requirements. Confirm that the PowerDI5060-8 footprint matches your PCB layout guidelines. Ensure thermal management strategies account for the specified junction-to-case resistance values during high-current operation.

Selection Notes

Select this component when applications require low on-resistance and high current handling within a compact surface-mount form factor. Consider the +175°C rating for environments with elevated ambient temperatures. Verify gate drive voltage compatibility with the specified threshold characteristics.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for high-efficiency power management. It utilizes silicon technology within a molded plastic green molding compound package. The product is lead-free, RoHS compliant, and halogen/antimony free.