DMTH41M3LPSW-13

$0.54

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:6bef97d3fc63 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：214A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：62 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5002 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.3W (Ta), 115W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH41M3LPSW-13

Overview

The DMTH41M3LPSW-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage of 40V and a continuous drain current of 223A at TC = +25°C. The on-resistance is 1.38mΩ at VGS = 10V and 2.3mΩ at VGS = 4.5V, both measured at ID = 20A. The device supports an operating temperature range from -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production
Wettable flank design facilitates optical inspection
Lead-free finish with RoHS compliance

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel carrier configuration. Confirm that the standard DMTH41M3LPSW part number matches the required electrical specifications before procurement. Ensure the application environment does not exceed the absolute maximum ratings defined in the datasheet.

Selection Notes

Select this component when high current handling and low conduction losses are critical. The PowerDI5060-8 package provides a compact footprint suitable for space-constrained designs. Consider the thermal resistance characteristics and ensure adequate heat dissipation strategies are implemented for sustained high-current operations.

Part Context

This part belongs to Diodes Incorporated's new generation of N-channel MOSFETs designed to minimize RDS(ON) while maintaining superior switching performance. It is distinct from automotive-compliant variants, which are available under separate datasheets such as the DMTH41M3LPSWQ.

Replacement Considerations

The DMTH41M3LPSWQ is an automotive-compliant alternative within the same series. Verify pinout compatibility and thermal characteristics when substituting with other 40V N-channel MOSFETs in the PowerDI5060-8 package.