DMTH41M3SPSW-13

$0.54

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:bb67c6226dfd Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：212A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.38mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：61 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5433 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.75W (Ta), 114W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH41M3SPSW-13

Overview

The DMTH41M3SPSW-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8/SWP package. It features a maximum drain-source voltage (BVDSS) of 40V and a static drain-source on-resistance (RDS(ON)) of 1.38mΩ at VGS=10V. The device supports a continuous drain current (ID) of 212A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
Features wettable flanks to facilitate improved optical inspection during assembly
Undergoes 100% unclamped inductive switching (UIS) testing in production

Applications

Engine-management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration with a packing quantity of 2500 units. Confirm that the component meets RoHS directives and is halogen and antimony free as defined by the manufacturer's green product standards before finalizing procurement specifications.

Selection Notes

Select this component when low RDS(ON) is required to minimize power losses while maintaining fast switching speeds. Ensure the application environment does not exceed the +175°C maximum junction temperature rating. Verify that the gate drive voltage aligns with the specified characteristics for optimal performance.

Part Context

This part belongs to Diodes Incorporated's PowerDI5060-8 series of automotive-compliant N-channel MOSFETs. It utilizes a molded plastic 'Green' molding compound with a UL Flammability Classification Rating of 94V-0. The terminals are finished with matte tin annealed over a copper leadframe.