DMTH42M4SPS-13

$0.56

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:aadc254927f8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：79.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6968 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.06W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type K)
Package / Case：8-PowerTDFN

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DMTH42M4SPS-13

Overview

The DMTH42M4SPS-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source on-resistance of 2.4mΩ at VGS=10V and ID=30A, with a continuous drain current rating of 200A at TC=+25°C. The device supports an operating junction temperature range from -55°C to +175°C and includes a body diode with a forward voltage of 1.2V max at IS=20A.

Feature Summary

Engineered for high efficiency power management by minimizing on-state resistance while maintaining superior switching performance.
Rated for operation up to +175°C, making it suitable for high ambient temperature environments.
Features a thermally efficient package profile under 1.1mm, ideal for thin applications.
Verified reliability through 100% Unclamped Inductive Switching (UIS) testing in production.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component meets RoHS compliance standards and is halogen and antimony free. Ensure the application environment does not exceed the specified thermal limits or voltage ratings defined in the datasheet.

Selection Notes

Select this component when low conduction losses are critical due to its 2.4mΩ maximum RDS(ON). The wide operating temperature range up to +175°C allows for robust performance in demanding automotive or industrial settings. The compact PowerDI5060-8 footprint is advantageous for space-constrained designs requiring high current handling capabilities.

Part Context

This part belongs to Diodes Incorporated's DMTH series of N-channel MOSFETs designed for automotive and industrial applications. It utilizes the PowerDI®5060-8 (Type K) surface-mount package, which provides enhanced thermal dissipation compared to standard packages. The device is manufactured using silicon technology optimized for low on-resistance and fast switching speeds.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers within the DMTH series or compatible PowerDI packages. Cross-referencing requires matching voltage ratings, current capabilities, and thermal characteristics.