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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2182 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.5W (Ta), 65.2W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMTH43M7LFG-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device utilizes a PowerDI3333-8 surface-mount package. Key electrical parameters include a maximum on-resistance of 3.0mΩ at VGS=10V and 5.0mΩ at VGS=5V, with continuous drain currents of 100A and 78A respectively. Total gate charge is typically 30nC.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features low on-state resistance to minimize conduction losses
- Includes 100% unclamped inductive switching testing for robustness
- Exhibits excellent figure of merit through optimized gate-drain charge
Applications
- Motor controls
- DC-DC converters
- Power management systems
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 3,000 units. Confirm that the PowerDI3333-8 package dimensions align with the target PCB footprint. Ensure compliance with RoHS and halogen-free requirements if mandated by the end product specifications.
Selection Notes
Select this component when a 40V rating is sufficient and high thermal stability is required. The PowerDI3333-8 package offers a compact form factor suitable for space-constrained designs. Evaluate the 3.0mΩ on-resistance against system efficiency targets and verify that the 100A continuous current capability meets peak load demands.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. These devices are engineered for high-efficiency power management applications requiring low on-state resistance and superior switching performance. The series supports automotive-grade reliability standards when specified appropriately.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, package types, and electrical characteristics.
