DMTH43M7LFGQ-7

$0.40

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:96884a779073 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2182 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 65.2W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH43M7LFGQ-7

Overview

The DMTH43M7LFGQ-7 is a 40V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source on-resistance of 3.0mΩ at VGS=10V and 5.0mΩ at VGS=5V, supporting continuous drain currents of 100A and 78A respectively. The device operates within a junction temperature range of -55°C to +175°C and includes an integrated body diode with a forward voltage of 1.0V max.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
Rated for operation in high ambient temperature environments up to +175°C.
Manufactured in IATF 16949 certified facilities to meet specific automotive change control requirements.

Applications

Motor control
DC-DC converters
Power management

Procurement Notes

Verify the complete part number including the suffix (e.g., -7 or -13) to confirm the correct tape and reel packing quantity. Confirm that the required RoHS compliance and halogen-free specifications align with project environmental regulations before finalizing procurement orders.

Selection Notes

Select this component when low on-state losses are critical for efficiency. The device offers excellent gate charge characteristics suitable for high-frequency switching. Ensure thermal design accounts for the specified power dissipation limits across the full operating temperature range.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes the PowerDI3333-8 surface-mount package designed for compact board layouts while maintaining robust thermal performance for demanding power electronics applications.

Replacement Considerations

Consult official documentation for verified substitutes. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without redesigning the host circuitry.