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Product Detailed Parameters
- Description：MOSFET N-CH 40V PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2798 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.62W (Ta), 65.2W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMTH43M8LFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 100A at a case temperature of +25°C. The device offers a typical static drain-source on-resistance of 3.0mΩ at VGS=10V and 5.0mΩ at VGS=5V. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI3333-8 surface-mount package.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- Features low on-state resistance to minimize conduction losses
- Includes 100% unclamped inductive switching testing for enhanced reliability
- Qualified to AEC-Q101 standards for automotive-grade high reliability
Applications
- DC-DC Converters
- Power Management
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The standard tape and reel configuration typically contains 2000 units per reel. Confirm RoHS compliance and halogen-free status requirements with the manufacturer before finalizing procurement specifications.
Selection Notes
Select this component when a compact N-channel MOSFET with low on-resistance is required for power management circuits. Ensure the application environment supports the specified thermal characteristics and that the gate drive voltage aligns with the threshold requirements for optimal performance.
Part Context
This part belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to provide superior switching performance while minimizing on-state resistance. The device is housed in a PowerDI3333-8 package, which provides a small footprint suitable for space-constrained designs.
Replacement Considerations
The automotive-compliant variant DMTH43M8LFGQ-7 is available as a direct substitute. Verify package compatibility and electrical parameter alignment when considering alternative manufacturers or different product lines.
