DMTH43M8LFGQ-13

$1.24

Description：MOSFET N-CH 40V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:958b31405b95 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2798 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.62W (Ta), 65.2W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH43M8LFGQ-13

Overview

The DMTH43M8LFGQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device utilizes the PowerDI3333-8 surface-mount package. Key electrical parameters include a maximum on-resistance of 3.0mΩ at VGS=10V and 5.0mΩ at VGS=5V, with continuous drain currents reaching 100A at TC=+25°C. Total gate charge is specified at 40.1nC.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards and supported by PPAP documentation.
Rated for operation in high ambient temperature environments up to +175°C.
Manufactured in IATF 16949 certified facilities to meet specific automotive change control requirements.
Subject to 100% unclamped inductive switching testing during production to ensure robustness.

Applications

Motor control systems
DC-DC converters
Power management circuits

Procurement Notes

Verify that the component matches the exact part number DMTH43M8LFGQ-13, as suffixes indicate specific packaging quantities. Confirm the manufacturer is Diodes Incorporated and check for AEC-Q101 qualification status if automotive compliance is required. Ensure the package type corresponds to PowerDI3333-8 and validate RoHS compliance against current directives before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring low on-state losses and high thermal stability. The low RDS(ON) minimizes conduction losses, while the excellent FOM supports efficient switching. Consider the PowerDI3333-8 package constraints for PCB layout and thermal dissipation. Verify that the 40V rating provides sufficient margin for the specific application voltage levels.

Part Context

This MOSFET belongs to the DMTH43M8 series designed for automotive-grade reliability. It is housed in the compact PowerDI3333-8 package, which integrates an exposed drain pad for improved thermal performance. The device is specifically engineered to handle high current densities and withstand harsh operating conditions typical in modern vehicle electronics.

Replacement Considerations

The datasheet lists DMTH43M8LFGQ-7 as an equivalent orderable part number differing only in reel quantity (2,000 vs 3,000 units). No other direct substitutes are documented in the provided source material.