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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2798 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.62W (Ta), 65.2W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMTH43M8LFGQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI3333-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 40 V and supports a continuous drain current (Id) of 100 A. Its maximum on-resistance (Rds On) is specified at 3 mOhms, with a gate-source voltage rating of ±20 V. Key switching parameters include a gate charge (Qg) of 40.1 nC, a rise time of 10.7 ns, and a fall time of 12.4 ns. The component is qualified under the AEC-Q101 standard for automotive applications and operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Automotive-grade reliability certified under the AEC-Q101 qualification standard.
- High-current capability enabled by a low on-resistance design in a compact footprint.
- Enhanced thermal performance through the exposed pad PowerDI3333-8 package structure.
Applications
- Automotive power distribution systems
- DC-DC converter output stages
- Motor control circuits
Procurement Notes
Verify the specific suffix 'FGQ-7' against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure that the AEC-Q101 certification requirements align with the target application's environmental standards. Confirm that the PowerDI3333-8 package dimensions match the PCB layout constraints before finalizing procurement decisions.
Selection Notes
Select this component when a single N-channel configuration with high current handling is required in a small form factor. The 40 V rating suits low-voltage automotive and industrial bus architectures. Compare the 3 mOhm Rds On against alternative packages to evaluate thermal management needs. Consider the 100 A current rating relative to the intended heatsinking or PCB copper area capabilities.
Part Context
This part belongs to the DMTH series of automotive MOSFETs from Diodes Incorporated. It shares the DMTH43M8 family characteristics but differs in packaging, specifically utilizing the PowerDI3333-8 SMD format instead of larger through-hole or DPAK variants. This series targets applications requiring robust performance in space-constrained automotive electronics.
Replacement Considerations
The DMTH43M8LK3Q-13 offers identical electrical specifications but uses a DPAK-3 (TO-252-3) package. Verify mechanical fit and thermal dissipation differences if substituting between these package types.
