DMTH43M8LFGQ-7

$1.41

Description：MOSFET N-CH 40V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:28ba6bcbcee4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2798 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.62W (Ta), 65.2W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH43M8LFGQ-7

Overview

The DMTH43M8LFGQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 100A at a case temperature of +25°C. The device exhibits a low on-resistance of 3.0mΩ at VGS=10V and 5.0mΩ at VGS=5V. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI3333-8 surface-mount package.

Feature Summary

Qualified for automotive applications with AEC-Q101 certification and PPAP capability, ensuring suitability for high-reliability environments.
Rated for operation up to +175°C, making it ideal for circuits exposed to high ambient temperatures.
Manufactured in IATF 16949 certified facilities and subjected to 100% unclamped inductive switching testing during production.

Applications

Motor control systems
DC-DC converters
Power management circuits

Procurement Notes

Verify that the component matches the specific DMTH43M8LFGQ-7 part number and PowerDI3333-8 package configuration. Confirm compliance with RoHS directives and ensure the supplier provides traceability documentation required for automotive-grade parts. Validate that the received units are free from physical damage consistent with the specified moisture sensitivity level.

Selection Notes

Select this component when designing circuits requiring robust performance under high thermal stress or demanding automotive standards. The low on-resistance minimizes conduction losses, while the high current rating supports heavy loads. Ensure the gate drive voltage aligns with the specified thresholds for optimal switching efficiency and thermal management.

Part Context

This MOSFET belongs to the DMTH43M8 series designed specifically for automotive electronics. It integrates advanced silicon technology within a compact PowerDI3333-8 footprint. The device meets stringent industry reliability standards, including halogen-free and antimony-free material requirements for environmentally compliant manufacturing.

Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Cross-reference pinouts, thermal resistance values, and electrical ratings before implementing any substitute components to maintain system integrity.