ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：23A (Ta), 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2737 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.6W (Ta), 65W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
Download product information
Overview
The DMTH43M8LFVW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +175°C. The device utilizes a PowerDI3333-8 surface-mount package with wettable flank technology. Key electrical parameters include a maximum on-resistance of 4.3mΩ at VGS=10V and 7.5mΩ at VGS=4.5V, supporting continuous drain currents up to 96A at TC=+25°C. Total gate charge is specified at 36.9nC.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features wettable flanks to facilitate improved optical inspection during assembly
- Includes 100% unclamped inductive switching (UIS) testing in production for robustness
Applications
- Backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free specifications, before finalizing procurement orders.
Selection Notes
Select this component when low on-state resistance is critical for minimizing conduction losses in power management applications. Ensure the design accommodates the thermal characteristics provided for both case and ambient mounting conditions to maintain reliability under load.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It is designed specifically for high-efficiency power applications requiring superior switching performance alongside minimized on-state resistance. The device is housed in a compact PowerDI3333-8 package suitable for space-constrained designs.
Replacement Considerations
Consult the manufacturer's official substitution guide or contact technical support directly to identify verified replacement parts. Do not assume cross-compatibility based solely on similar package types or nominal voltage ratings without verifying detailed electrical parameters.
