SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DMTH43M8LPDWQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 52 A at ambient temperature, with a maximum on-resistance (Rds(on)) of 3.3 mΩ at Vgs = 10 V. The device utilizes PowerDI5060-8/SWP surface-mount packaging and supports a junction temperature range from -55°C to +175°C. It holds AEC-Q101 automotive qualification.
Verify the specific suffix 'DWQ' against the manufacturer's official datasheet to confirm the exact tape-and-reel quantity and lead time requirements. Ensure compatibility with automated pick-and-place equipment due to the PowerDI5060-8 package dimensions. Request the latest PCN documents to confirm material composition changes.
Select this component when a 60 V rating is required alongside high current handling up to 52 A. Compare Rds(on) values at 10 V gate drive against alternative packages to ensure thermal management meets system constraints. Verify that the 3.3 mΩ resistance aligns with efficiency targets for the specific DC-DC topology.
This part belongs to the DMTH series of automotive-qualified silicon MOSFETs from Diodes Incorporated. The series focuses on low-loss switching solutions for automotive electronics. The DMTH43M8 variant specifically targets applications requiring higher voltage tolerance than the 40 V variants while maintaining compact footprint requirements.
Direct substitutes include other 60 V N-channel MOSFETs in the PowerDI5060-8 package with comparable Rds(on) and Id ratings. Verify pinout compatibility and thermal pad configuration before substitution. Check if alternative parts meet the same AEC-Q101 qualification level for automotive use.