DMTH43M8LPDWQ-13

DMTH43M8LPDWQ-13

$0.58
  • Description:MOSFET 2N-CH 40V 110A PWRDI50
  • Series:-

SKU:1d09f6682e86 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 110A PWRDI50
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:110A (Tc)
  • Rds On (Max) @ Id, Vgs:4.2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:41.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2796pF @ 20V
  • Power - Max:2.98W (Ta), 80.2W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PowerDI5060-8 (Type UXD)
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

DMTH43M8LPDWQ-13

Overview

The DMTH43M8LPDWQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 52 A at ambient temperature, with a maximum on-resistance (Rds(on)) of 3.3 mΩ at Vgs = 10 V. The device utilizes PowerDI5060-8/SWP surface-mount packaging and supports a junction temperature range from -55°C to +175°C. It holds AEC-Q101 automotive qualification.

Feature Summary

  • Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in demanding environments.
  • Low on-resistance design optimized for high-efficiency power switching applications.
  • Surface-mount PowerDI5060-8 package providing enhanced thermal dissipation capabilities.

Applications

  • Automotive power distribution systems
  • High-side and low-side load switch circuits
  • DC-DC converter output stages

Procurement Notes

Verify the specific suffix 'DWQ' against the manufacturer's official datasheet to confirm the exact tape-and-reel quantity and lead time requirements. Ensure compatibility with automated pick-and-place equipment due to the PowerDI5060-8 package dimensions. Request the latest PCN documents to confirm material composition changes.

Selection Notes

Select this component when a 60 V rating is required alongside high current handling up to 52 A. Compare Rds(on) values at 10 V gate drive against alternative packages to ensure thermal management meets system constraints. Verify that the 3.3 mΩ resistance aligns with efficiency targets for the specific DC-DC topology.

Part Context

This part belongs to the DMTH series of automotive-qualified silicon MOSFETs from Diodes Incorporated. The series focuses on low-loss switching solutions for automotive electronics. The DMTH43M8 variant specifically targets applications requiring higher voltage tolerance than the 40 V variants while maintaining compact footprint requirements.

Replacement Considerations

Direct substitutes include other 60 V N-channel MOSFETs in the PowerDI5060-8 package with comparable Rds(on) and Id ratings. Verify pinout compatibility and thermal pad configuration before substitution. Check if alternative parts meet the same AEC-Q101 qualification level for automotive use.

DMTH43M8LPDWQ-13DMTH43M8LPDWQ-13
$0.58
Buy Now