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Product Detailed Parameters
- Description：MOSFET N-CH 40V 22A PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2693 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.7W (Ta), 83W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH43M8LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI5060-8 surface-mount package. It features a drain-source breakdown voltage (BVDSS) of 40V and a maximum continuous drain current (ID) of 100A at TC = 25°C. The device exhibits a low static drain-source on-resistance (RDS(ON)) of 3.3mΩ max at VGS = 10V and 5.0mΩ max at VGS = 5V. Total gate charge (QG) is 38.5nC at VGS = 10V. Operating junction temperature ranges from -55°C to +175°C.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
- Features 100% unclamped inductive switching capability for robust end applications.
- Designed with low RDS(ON) to minimize on-state power losses.
- Qualified to JEDEC standards for high reliability.
Applications
- BLDC motors
- DC-DC converters
- Load switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration as defined in the official datasheet. Confirm that the required thermal management aligns with the specified junction-to-ambient resistance values when operating without direct case cooling. Ensure design parameters respect the absolute maximum ratings provided in the specification sheet.
Selection Notes
Select this component for designs requiring a 40V N-channel MOSFET with high current handling capabilities in a compact PowerDI5060-8 footprint. Consider the low gate charge and fast switching speeds for efficiency in high-frequency applications. Evaluate thermal performance based on the specific PCB copper area and mounting conditions relative to the stated thermal resistance characteristics.
Part Context
This part belongs to the DMTH43M8 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology within a molded plastic PowerDI package rated UL 94V-0. The device is lead-free, RoHS compliant, and halogen/antimony free. An automotive-compliant variant is available under a separate designation.
Replacement Considerations
An automotive-compliant version exists under the part number DMTH43M8LPSQ. Verify if AEC-Q101 qualification is required for the target application before selecting an alternative or substitute component.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 100A at a case temperature of 25°C and 22A at an ambient temperature of 25°C.
Is this component qualified for automotive applications?
The standard DMTH43M8LPS-13 is not explicitly designated as automotive-grade; however, an automotive-compliant part is available under the separate datasheet for DMTH43M8LPSQ.
