DMTH43M8LPSW-13

$0.31

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:2b4a5321f0a3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：3.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：38.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2693 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.7W (Ta), 83W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH43M8LPSW-13

Overview

The DMTH43M8LPSW-13 is a single N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a drain-source voltage of 40V and a maximum on-resistance of 3.3mΩ at VGS=10V. The device supports a continuous drain current of 100A at case temperature of +25°C, with a total power dissipation of 83W under the same conditions. Operating junction temperatures range from -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching capability
Low input capacitance and fast switching speed

Applications

BLDC motors
DC-DC converters
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel carrier configuration. Confirm that the standard commercial version meets all required environmental specifications before substituting with automotive-compliant variants like the DMTH43M8LPSWQ.

Selection Notes

Select this component when high thermal tolerance and low conduction losses are critical. The 40V rating suits applications requiring moderate voltage blocking. Ensure gate drive voltages align with the specified thresholds to maintain optimal on-resistance performance during operation.

Part Context

This part belongs to Diodes Incorporated's new generation of N-channel MOSFETs designed to minimize RDS(ON) while maintaining superior switching performance. It utilizes a PowerDI5060-8/SWP (Type UX) surface mount package with a molded plastic green compound construction.