DMTH43M8LPSWQ-13

$0.26

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:46cd978ecdb9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：3.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：49 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3367 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.7W (Ta), 83.3W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

Download product information

DMTH43M8LPSWQ-13

Overview

The DMTH43M8LPSWQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a drain-source voltage (BVDSS) of 40V and a maximum on-resistance (RDS(ON)) of 3.3mΩ at VGS=10V and TC=25°C. The device supports a continuous drain current of 100A at TC=25°C and operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage of 1V to 2.5V, total gate charge of 38.5nC typical at VGS=10V, and input capacitance of 2,693pF typical.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications.
Rated for operation up to +175°C junction temperature.
Features 100% unclamped inductive switching testing for robustness.
Manufactured in IATF 16949 certified facilities.

Applications

BLDC motors
DC-DC converters
Load switches

Procurement Notes

Verify the specific suffix 'SWP' indicates the PowerDI5060-8/SWP (Type UX) package configuration when ordering. Confirm that the required quantity matches the standard tape and reel packing quantity of 2,500 units per carrier. Ensure design compliance with RoHS 3 and halogen-free requirements as defined by the manufacturer's green product definitions.

Selection Notes

Select this component for high-current switching applications requiring low on-state losses and high thermal stability. The 40V rating suits low-voltage automotive systems. Verify that the gate drive voltage meets the minimum requirements for the desired RDS(ON) performance. Consider the thermal resistance characteristics for heat dissipation planning in enclosed environments.

Part Context

This part belongs to the DMTH43M8 series of N-channel MOSFETs designed for automotive use. It shares similar electrical characteristics with other variants in the family but differs in packaging and specific qualification status. The SWP suffix denotes a specific surface-mount variant optimized for automated assembly processes.