DMTH45M5LFVWQ-7

$0.27

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:48a99bf7385d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：978 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 51W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

Download product information

DMTH45M5LFVWQ-7

Overview

The DMTH45M5LFVWQ-7 is a 40V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source on-resistance of 5.5mΩ at VGS=10V and 7.9mΩ at VGS=4.5V, supporting continuous drain currents of 71A and 59A respectively at TC=+25°C. The device operates within a junction temperature range of -55°C to +175°C and includes wettable flank terminals for improved optical inspection.

Feature Summary

Rated for operation up to +175°C junction temperature
Low on-state resistance minimizes conduction losses
Wettable flank design enables improved optical inspection
100% unclamped inductive switching tested in production

Applications

Automotive backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packing quantity and carrier type. Confirm AEC-Q101 qualification and PPAP capability requirements are met for automotive supply chains. Ensure thermal management designs account for the specified power dissipation limits under intended operating conditions.

Selection Notes

Select this component when high ambient temperatures require a +175°C rating. Choose based on the required gate drive voltage, as RDS(ON) varies significantly between 10V and 4.5V logic levels. Consider the compact PowerDI3333-8 footprint for space-constrained PCB layouts requiring robust thermal performance.

Part Context

This part belongs to the DMTH series of automotive-grade N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8/SWP (Type UX) surface-mount package with exposed drain pads for efficient heat transfer. The series is designed to meet stringent automotive reliability standards.

Replacement Considerations

Consult official Diodes Incorporated cross-reference lists for verified substitutes. Ensure any replacement maintains the 40V BVDSS rating, compatible PowerDI3333-8 footprint, and +175°C thermal rating.