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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 79A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：79A (Tc)
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：978pF @ 20V
- Power - Max：3W (Ta), 60W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type UXD)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMTH45M5LPDWQ-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications. It features a 40V drain-source voltage (BVDSS) and operates up to +175°C junction temperature. The device offers a maximum on-resistance (RDS(ON)) of 5.5mΩ at VGS=10V and 7.9mΩ at VGS=4.5V. Continuous drain current reaches 79A at TC=+25°C. Packaged in PowerDI5060-8/SWP (Type UXD), it includes wettable flanks for optical inspection and meets AEC-Q101 standards.
Feature Summary
- Rated for high ambient temperatures with operation up to +175°C
- 100% Unclamped Inductive Switching (UIS) tested in production
- Wettable flank design enables improved optical inspection
- Qualified to AEC-Q101 and supported by PPAP
Applications
- Wireless charging systems
- DC-DC converters
- Power management circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component carries the required automotive quality certifications, including AEC-Q101 qualification and PPAP support, to ensure compliance with intended application standards.
Selection Notes
Select this component for designs requiring low on-state losses and robust switching performance in high-temperature environments. Ensure the gate drive voltage supports the specified RDS(ON) thresholds. Verify thermal management requirements against the junction-to-case thermal resistance of 2.5°C/W for optimal heat dissipation.
Part Context
This part belongs to the DMTH series of automotive-grade MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 package, which provides a compact surface-mount solution suitable for space-constrained PCB layouts while maintaining high current handling capabilities.
Replacement Considerations
Parametric equivalent DMTH45M5LPDW-13 is available as a substitute. Verify pin compatibility and electrical specifications before substitution. No other official substitutes are documented.
