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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：978 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.5W (Ta), 72W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH45M5LPSW-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum on-resistance of 5.5mΩ at VGS=10V and 7.9mΩ at VGS=4.5V, supporting continuous drain currents of 86A at TC=25°C and 60A at TC=100°C. The device operates within a temperature range of -55°C to +175°C, with a total power dissipation of 3.5W at TA=25°C and 72W at TC=25°C.
Feature Summary
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production
- Wettable flank design for improved optical inspection
Applications
- High frequency switching
- Synchronous rectifications
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2500 units per reel. Confirm that the component meets RoHS directives and is halogen and antimony free. Ensure the selected part matches the PowerDI5060-8 physical dimensions and pinout requirements for the target PCB layout.
Selection Notes
Select this component when low on-state resistance is critical for high efficiency power management. The wide operating temperature range supports deployment in high ambient environments. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance and switching speed characteristics.
Part Context
This device belongs to Diodes Incorporated's DMTH series of N-channel MOSFETs designed for high current applications. It utilizes silicon technology housed in a molded plastic PowerDI package with a matte tin annealed terminal finish over a copper leadframe. The product is classified as a single channel enhancement mode transistor.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume functional equivalence based solely on similar voltage or current ratings without cross-referencing datasheet specifications.
