DMTH45M5SPDWQ-13

DMTH45M5SPDWQ-13

$1.58
  • Description:MOSFET 2N-CH 40V 79A PWRDI50
  • Series:-

SKU:0872938a4bfb Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 79A PWRDI50
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:79A (Tc)
  • Rds On (Max) @ Id, Vgs:5.5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:13.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1083pF @ 20V
  • Power - Max:3.3W (Ta), 60W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PowerDI5060-8 (Type UXD)
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMTH45M5SPDWQ-13

Overview

The DMTH45M5SPDWQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source voltage rating and a maximum continuous drain current of 79A at +25°C case temperature. The device exhibits a static drain-source on-resistance (RDS(ON)) of 5.5mΩ maximum at VGS = 10V and ID = 25A. It operates within a junction temperature range of -55°C to +175°C. The component utilizes a PowerDI5060-8/SWP (Type UXD) surface-mount package with wettable flanks for optical inspection.

Feature Summary

  • Qualified to AEC-Q101 standards and supported by PPAP for automotive applications.
  • Rated for operation in high ambient temperature environments up to +175°C.
  • Manufactured in IATF 16949 certified facilities with specific change control requirements.
  • Features wettable flank technology to facilitate improved optical inspection.

Applications

  • Wireless charging systems
  • DC-DC converters
  • Power management circuits

Procurement Notes

Verify the complete part number, including the -13 suffix, against official Diodes Incorporated documentation before procurement. Confirm that the specified PowerDI5060-8/SWP (Type UXD) package variant matches the design requirements. Ensure compliance with RoHS and halogen-free specifications as defined in the manufacturer's quality definitions.

Selection Notes

Select this component for designs requiring robust performance in high-temperature automotive environments. Evaluate thermal resistance values relative to the specific PCB copper area and heatsinking strategy. Verify that the gate threshold voltage and total gate charge parameters align with the driving circuit capabilities for optimal switching efficiency.

Part Context

This component belongs to the DMTH series of dual N-channel MOSFETs from Diodes Incorporated. It is specifically engineered to meet stringent automotive reliability standards. The device integrates two independent channels within a single compact surface-mount package to optimize board space while maintaining high current handling capabilities.

Replacement Considerations

Consult the official datasheet for parametric equivalents. Substitution requires verification of matching voltage ratings, current limits, and package dimensions. Ensure any alternative component maintains AEC-Q101 qualification if required by the application.

FAQ

Is the DMTH45M5SPDWQ-13 suitable for high-temperature automotive applications?

Yes, the device is rated for a junction temperature up to +175°C and is qualified to AEC-Q101 standards.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 79A when measured at a case temperature of +25°C.

Does the package support automated optical inspection?

Yes, the PowerDI5060-8/SWP package includes wettable flanks designed to improve optical inspection accuracy.

DMTH45M5SPDWQ-13DMTH45M5SPDWQ-13
$1.58
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