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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：16.3A (Ta), 67.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1315 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 54.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH46M7SFVW-13 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 7.4mΩ at VGS=10V and a continuous drain current of 67.2A at TC=+25°C. The device operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI3333-8 package with wettable flanks.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- Features low RDS(ON) to minimize on-state losses
- Includes wettable flank design for improved optical inspection
- Undergoes 100% unclamped inductive switching (UIS) testing in production
Applications
- Motor controls
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 compliance standards and is halogen-free. Ensure the application environment supports the specified thermal characteristics and operating voltage limits defined in the datasheet.
Selection Notes
Select this component when a 40V rating and low on-resistance are required for efficient power management. The PowerDI3333-8 package offers a compact footprint suitable for space-constrained designs. Consider the +175°C rating for applications involving elevated ambient temperatures or significant self-heating.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It is designed as a new generation device to balance low on-state resistance with superior switching performance. The product is intended for high-efficiency power management applications requiring robust reliability.
Replacement Considerations
The datasheet lists DMTH46M7SFVW-7 as an alternative packing quantity variant within the same family. Verify pinout compatibility and electrical specifications before substituting with other manufacturers' components.
