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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：16.3A (Ta), 67.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1315 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 54.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH46M7SFVW-7 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (SWP) package with wettable flank technology. The device features a maximum drain-source on-resistance of 7.4mΩ at VGS=10V and ID=20A, supporting a continuous drain current of 67.2A at TC=+25°C. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Features wettable flank design for improved optical inspection
- Guaranteed 100% unclamped inductive switching (UIS) test capability
Applications
- Motor controls
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets all required environmental compliance standards, including RoHS and halogen-free specifications, prior to final procurement decisions.
Selection Notes
Select this component for high-efficiency power management applications requiring low on-state resistance and superior switching performance. Ensure the thermal environment supports the specified operating temperature range and verify compatibility with the PowerDI3333-8 footprint during PCB layout.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining robust switching characteristics. The device is intended for use in demanding electronic environments where reliability and thermal performance are critical factors.
Replacement Considerations
DMTH46M7SFVW-13 is a confirmed substitute offering identical electrical specifications but packaged in a 3,000-unit tape and reel configuration instead of the standard 2,000-unit quantity.
