DMTH47M2LFVW-13

$0.20

Description：MOSFET BVDSS: 31V~40V PowerDI333
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:d20f6408f006 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V PowerDI333
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：13.6A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：881 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.9W (Ta), 37.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH47M2LFVW-13

Overview

The DMTH47M2LFVW-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features an on-resistance of 8.9mΩ at VGS=10V and 13.5mΩ at VGS=4.5V, supporting continuous drain currents up to 49.0A at TC=+25°C. The device operates with a junction temperature range of -55°C to +175°C and includes wettable flank terminals for improved inspection.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features wettable flank terminals to facilitate optical inspection
Includes 100% unclamped inductive switching (UIS) testing for reliability

Applications

Backlighting
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the PowerDI3333-8 (SWP) Type UX package dimensions align with the target PCB footprint requirements. Ensure compliance with RoHS and halogen-free specifications if required by the end application standards.

Selection Notes

Select this component when low on-state resistance is critical for efficiency in power management circuits. The +175°C rating makes it suitable for high-temperature environments where standard devices may fail. Verify gate drive voltage compatibility, as RDS(ON) varies significantly between 10V and 4.5V conditions.

Part Context

This part belongs to Diodes Incorporated's DMTH series of N-channel MOSFETs designed for high-efficiency applications. It utilizes the PowerDI3333-8 surface-mount package, which provides thermal performance advantages over traditional packages while maintaining a compact footprint suitable for dense board layouts.