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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V PowerDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：13.6A (Ta), 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：881 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.9W (Ta), 37.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH47M2LFVW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +175°C. The device utilizes the PowerDI3333-8 (SWP) Type UX package with wettable flank terminals. Key electrical parameters include a maximum on-resistance of 8.9mΩ at VGS=10V and 13.5mΩ at VGS=4.5V, both measured at ID=20A. Continuous drain current ratings are 49.0A at TC=+25°C and 13.6A at TA=+25°C. Total gate charge is 12.3nC at VGS=10V.
Feature Summary
- Rated for operation up to +175°C junction temperature for high ambient environments
- Features wettable flank terminals to improve optical inspection reliability
- Designed to minimize on-state resistance while maintaining superior switching performance
- 100% unclamped inductive switching (UIS) tested in production
Applications
- Backlighting systems
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 2,000-unit tape and reel carrier configuration as documented in the manufacturer's ordering information. Confirm that the PowerDI3333-8 (SWP) Type UX package variant matches the required footprint and thermal dissipation needs for the target PCB layout. Ensure compliance with RoHS 3 and halogen-free material requirements if mandated by the end product specifications.
Selection Notes
Select this component when a low-voltage, high-current N-channel switch is required in a compact surface-mount form factor. The +175°C rating allows for robust performance in thermally constrained environments without derating. The wettable flank design facilitates automated optical inspection, which is critical for maintaining quality control in high-volume manufacturing processes.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated, specifically designed for power management applications. It is distinct from dual-channel variants like the DMT47M2LDVQ-7 and other packages within the PowerDI family. The device is optimized for efficiency through a favorable figure of merit combining gate-drain charge and on-resistance.
Replacement Considerations
Consult official substitution lists for equivalent parts with matching voltage, current, and package specifications. Verify that any alternative component supports the same +175°C operating temperature and wettable flank construction if optical inspection is required.
