DMTH47M2LFVWQ-7

$0.24

Description：MOSFET BVDSS: 31V~40V PowerDI333
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:40ea957f94b6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V PowerDI333
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：13.6A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：881 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.9W (Ta), 37.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH47M2LFVWQ-7

Overview

The DMTH47M2LFVWQ-7 is a single N-channel enhancement mode MOSFET rated for 40V drain-source voltage and +175°C junction temperature. It features a maximum on-resistance of 8.9mΩ at VGS=10V and 13.5mΩ at VGS=4.5V, supporting continuous drain currents up to 49.0A at TC=+25°C. The device utilizes a PowerDI3333-8 (SWP) package with wettable flank terminals for improved optical inspection reliability.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features low RDS(ON) to minimize on-state power losses
Includes wettable flank design for enhanced optical inspection capabilities
Undergoes 100% unclamped inductive switching (UIS) testing during production

Applications

Automotive backlighting systems
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity, as the -7 suffix indicates a 2,000-unit tape and reel carrier while other suffixes may differ. Confirm AEC-Q101 qualification and PPAP capability requirements align with your automotive supply chain standards before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring robust performance in elevated thermal conditions up to +175°C. The low gate charge and optimized FOM make it suitable for efficient switching applications. Ensure the PCB layout supports the exposed drain pad for optimal thermal dissipation given the PowerDI3333-8 package constraints.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for stringent quality standards. It is manufactured in IATF 16949 certified facilities and supports specific change control requirements typical of automotive electronics manufacturing.