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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V TO252 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：897 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.5W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH47M2SK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 40V and a continuous drain current (ID) of 62A at TC = +25°C. The device exhibits a maximum static drain-source on-resistance (RDS(ON)) of 7.5mΩ at VGS = 10V and ID = 20A. It operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 50W at TC = +25°C.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features low RDS(ON) to minimize power losses during conduction
- Includes 100% unclamped inductive switching (UIS) testing in production
Applications
- Power management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging quantity of 2,500 units as documented in the official datasheet. Confirm that the component meets RoHS compliance standards and is halogen-free if required by your manufacturing specifications. Ensure the procurement channel provides traceability consistent with Diodes Incorporated's standard terms and conditions.
Selection Notes
Select this component when designing circuits requiring a 40V N-channel MOSFET capable of handling high currents up to 62A. The low gate charge characteristics support efficient switching performance. Consider the TO252 package dimensions and thermal resistance values for appropriate heatsinking or PCB layout strategies to maintain safe operating temperatures under load.
Part Context
This part belongs to the DMTH series of advanced information MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a TO252 (DPAK) package. The device is designed to provide superior switching performance alongside minimized on-state resistance, targeting efficiency improvements in various power management applications.
Replacement Considerations
Consult the manufacturer for automotive-specific variants qualified to AEC-Q100/101/104/200 standards. Verify pinout compatibility and electrical parameters before substituting with other 40V N-channel MOSFETs in the TO252 package.
