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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：14.6A (Ta), 52.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：897 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.82W (Ta), 36.6W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH48M3SFVW-13 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an 8.9mΩ maximum on-resistance at VGS=10V and supports a continuous drain current of 52.4A at TC=+25°C. The device operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI3333-8 (SWP) case, it utilizes wettable flank technology for improved optical inspection.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Features wettable flank design for enhanced optical inspection reliability
- Guaranteed 100% unclamped inductive switching performance
Applications
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the required ambient or thermal conditions align with the datasheet's specified ratings. Ensure compliance with RoHS and halogen-free requirements if mandated by the end application standards.
Selection Notes
Select this component when high efficiency power management requires minimized on-state losses alongside superior switching performance. The low gate-drain charge product optimizes switching transitions. Consider the PowerDI3333-8 package for applications demanding compact footprints with robust thermal dissipation capabilities.
Part Context
This part belongs to Diodes Incorporated's new generation MOSFET lineup designed to minimize on-state resistance while maintaining excellent switching characteristics. It serves as a lead-free, fully RoHS compliant alternative suitable for environments requiring high ambient temperature tolerance and reliable industrial-grade performance.
Replacement Considerations
For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, and IATF 16949 manufacturing, consult the separate automotive-compliant part number DMTH48M3SFVWQ.
