DMTH4M70SPGW-13

$1.33

Description：MOSFET BVDSS: 31V~40V POWERDI808
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f760b1d835f8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI808
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：460A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：0.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：117.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：10053 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：5.6W (Ta), 428W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI8080-5
Package / Case：SOT-1235

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DMTH4M70SPGW-13

Overview

The DMTH4M70SPGW-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI8080-5 package. It features a drain-source voltage (BVDSS) of 40V and a maximum on-resistance (RDS(ON)) of 0.7mΩ at VGS=10V. The device supports a continuous drain current (ID) of 460A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage of 2V to 4V, total gate charge of 117.1nC, and input capacitance of 10053pF.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
100% Unclamped Inductive Switching (UIS) tested in production for robustness
Wettable flank design facilitates improved optical inspection
Lead-free finish with RoHS compliance and halogen/antimony-free composition

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2000-unit tape and reel carrier configuration. Confirm that the component meets all applicable RoHS directives and environmental standards required by your manufacturing process. Ensure compatibility with the specified PowerDI8080-5 footprint during PCB layout validation.

Selection Notes

Select this component for applications requiring low conduction losses and high thermal resilience. The 40V rating and 0.7mΩ RDS(ON) make it appropriate for efficient power management circuits. Consider the +175°C operating limit when designing for elevated ambient conditions or limited cooling availability.

Part Context

This part belongs to Diodes Incorporated's PowerDI series of surface-mount MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The device utilizes a molded plastic 'Green' molding compound with UL flammability classification 94V-0.

Replacement Considerations

The datasheet explicitly states that the DMTH4M70SPGW is not recommended for new designs and recommends using the DMTH4M72SPGW as the preferred alternative.

FAQ

Is this component qualified for automotive applications?

No, the standard DMTH4M70SPGW-13 is not automotive-compliant. An automotive-compliant version is available under the separate part number DMTH4M70SPGWQ.