DMTH4M75LPSWQ-13

$0.95

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:492be793a0e4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：337A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.75mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：111 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9308 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH4M75LPSWQ-13

Overview

The DMTH4M75LPSWQ is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8/SWP package. It features a maximum drain-source voltage of 40V and a continuous drain current of 337A at TC = +25°C. The on-resistance is 0.75mΩ max at VGS = 10V and 1.3mΩ max at VGS = 4.5V, both at ID = 20A. It supports an operating temperature range from -55°C to +175°C with a junction-to-case thermal resistance of 1.0°C/W.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications
Features wettable flanks for improved optical inspection
Rated for operation up to +175°C junction temperature
Includes 100% unclamped inductive switching (UIS) testing

Applications

Engine-management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel carrier configuration. Confirm that the component meets IATF 16949 manufacturing requirements if your application demands specific change control protocols. Ensure the PowerDI5060-8/SWP footprint matches your PCB design guidelines before finalizing procurement.

Selection Notes

Select this component when high current handling near 337A is required within a low-profile form factor. The device is suitable for environments demanding robustness against inductive switching events. Consider the low on-resistance values for minimizing conduction losses in power conversion stages where gate drive voltages may vary between 4.5V and 10V.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for high-reliability sectors. It utilizes the PowerDI5060-8/SWP package, which offers a profile under 1.1mm. The series is engineered to provide high conversion efficiency and thermal performance suitable for compact electronic assemblies in vehicles.

Replacement Considerations

Consult official substitution lists for compatible alternatives. Verify pinout compatibility and electrical parameter margins before swapping components in existing designs.