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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：278A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：0.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：115 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：9434 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.6W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH4M90SPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI5060-8 package with an SWP suffix, supplied in tape and reel packaging containing 2500 units per factory pack. The device features a drain-source breakdown voltage (BVDSS) range of 31V to 40V. Key electrical characteristics include a continuous drain current of 278A, a maximum on-resistance of 0.0009 ohms, and a gate-source voltage rating of ±20V. It operates within a temperature range from -55°C to +150°C.
Feature Summary
- High current handling capability with a continuous drain current rating of 278A.
- Ultra-low on-resistance for improved power efficiency and reduced conduction losses.
- Robust thermal performance suitable for high-power density applications.
- Enhanced mode operation for standard logic-level control compatibility.
Applications
- DC-DC converter output stages
- Motor drive circuits
- Power distribution networks
Procurement Notes
Verify the specific suffix 'SPSW' against the manufacturer's latest datasheet to confirm pinout and thermal pad configuration. Ensure the ordering quantity aligns with the standard 2500-unit reel format. Confirm RoHS compliance status through official documentation before integration into regulated assemblies.
Selection Notes
Select this component when high current capacity and minimal voltage drop are critical design requirements. The PowerDI5060-8 package offers a balance between current handling and board space constraints. Evaluate thermal management solutions based on the specified power dissipation limits and ambient operating conditions.
Part Context
This part belongs to Diodes Incorporated's discrete semiconductor portfolio, specifically within the MOSFET category. It is designed for surface-mount technology (SMD/SMT) assembly. The product line focuses on providing efficient switching solutions for modern electronic systems requiring reliable power management.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify that any replacement maintains identical pinout, voltage ratings, and current capabilities to ensure circuit functionality without redesign.
