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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：278A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：0.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：115 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：9434 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.6W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH4M90SPSWQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes Silicon technology and is housed in a PowerDI5060-8 package with an exposed pad (SWP) configuration. The device features a drain-source breakdown voltage (BVDSS) range of 31V to 40V. It is supplied in tape and reel packaging, with a standard factory quantity of 2,500 units per reel. This component belongs to the discrete semiconductor category under transistors.
Feature Summary
- Dual N-channel enhancement mode architecture for integrated switching applications
- PowerDI5060-8 surface-mount package with exposed thermal pad for efficient heat dissipation
- Silicon-based construction optimized for low on-resistance performance
Applications
- DC-DC converter circuits requiring dual channel control
- Low-voltage power management systems
- Battery protection modules within portable electronics
Procurement Notes
Verify the specific suffix 'Q' indicates automotive or qualified grade status if required by your design specifications. Confirm the PowerDI5060-8/SWP footprint matches your PCB layout constraints. Ensure the datasheet version aligns with your manufacturing process requirements before finalizing procurement orders.
Selection Notes
Select this component when a compact dual N-channel solution is needed for voltages up to 40V. The PowerDI5060-8 package offers a balance between current handling capability and board space efficiency. Consider the thermal resistance characteristics of the exposed pad design for high-current applications.
Part Context
This part is part of Diodes Incorporated's DMTH series of dual MOSFETs. The series focuses on providing integrated solutions for space-constrained designs. The DMTH4M90SPSWQ-13 specifically targets the low-voltage segment, offering higher integration than single-channel alternatives while maintaining small form factor advantages.
Replacement Considerations
Check for direct substitutes within the DMTH4MxxSPSWQ family with compatible BVDSS ratings. Verify pinout compatibility with existing layouts when considering alternative packages like PowerDI3333 or larger footprints.
